Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III/V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

对于典型的样品 - GaAs - 波长在 632.8 nm 下的折射率和消光系数为3.85744及0.1983491。 以下是包含完整折射率和消光系数的文件。 如果文件无法下载，请点击“请求”（Request）以索取该专有文件。

Refractive Index Reference - J. B. Theeten, D. E. Aspnes, and R. P. H. Chang, J. Appl. Phys. 49, 6097 (1978)

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